| PART |
Description |
Maker |
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1802 E000561 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| GT5G134 |
IGBT for strobe flash
|
TOSHIBA
|
| RJP4003ANS-00-Q1 RJP4003ANS |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4301APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| FJC790 |
Camera Strobe Flash Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| GT20G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| FGR15N40A |
Strobe Flash N-Channel Logic Level IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
